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| CQDD-25M CQDD-25N 25 AMP TRIAC 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Peak Gate Voltage (tp=10s) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ JA JC 10 -40 to +150 -40 to +125 60 1.7 A/s C C C/W C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQDD -25M 600 25 150 94 40 1.0 10 16 CQDD -25N 800 UNITS V A A A2s W W A V ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125C VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV IT=100mA VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV ITM=35A, tp=380s VD=2 /3 VDRM, RGK=, TC=125C 6.0 TYP MAX 10 2.0 UNITS A mA mA mA mA V V V V/s 11.1 28.2 18.4 1.03 1.74 30 60 50 1.50 2.50 1.80 R1 (24-September 2004) Central TM Semiconductor Corp. CQDD-25M CQDD-25N 25 AMP TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.163 0.189 4.14 4.80 B 0.045 0.055 1.14 1.40 C 0.000 0.010 0.00 0.25 D 0.012 0.028 0.30 0.70 E 0.386 0.409 9.80 10.40 F 0.378 0.417 9.60 10.60 G 0.335 0.358 8.50 9.10 H 0.197 0.236 5.00 6.00 J 0.093 0.108 2.35 2.75 K 0.030 0.035 0.75 0.90 D2PAK (REV: R2) R1 (24-September 2004) |
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